Controllable memristive patterns in poly(9,9-dioctylfluorene)-based sandwich device

Abstract Currently, there are two prevalent types of I-V memristive patterns for memristive applications, 0-type and 8-type hysteresis loop, and their respective characteristics result in their specific applications in different situations, such as data storage and neuromorphic computing. In spite of the abundant achievements of these remarkable performances, scarce works are specially concerned about the relations and regulations between them for persuing the multiple functions in a single element, and an ideal platform with both the achievements and controllable transformations has been rarely reported. Herein, the novel organic material—poly(9,9-dioctylfluorene) (PFO) is utilized to construct the sandwich prototype. The electrical transporting properties are systematically investigated through particular programming protocols. The 0-type and 8-type memristive patterns are successfully obtained during low and high voltage sweeps, respectively. Then the sectionalized fitting results of the current curves, the carrier transporting behaviors as well as the regulations of device energy levels are associatively demonstrated to analyze the electrical activity-dependent transformations between different memristive patterns. More importantly, the appearance of the 8-type hysteresis loop can be regulated by the rectification property, and the rectification can be largely enhanced by the reconfiguration of device energy levels. Consequently, for the versatile memristive device, based on the 0-type hysteresis, it can serve as a data storage or artificial synapse element, and the rectification-modified memristive behaviors can effectively impede the unintended sneak current paths for high-density integration.