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Improved Performance of GaN Metal-Oxide-Semiconductor Capacitors byPplasma ALD of AlN Interlayer
Improved Performance of GaN Metal-Oxide-Semiconductor Capacitors byPplasma ALD of AlN Interlayer
2019
Dilini Hemakumara
Xu Li
Konstantinos Floros
Sung Cho
Ivor Guinney
Collin Humphreys
I.G. Thayne
Aileen OMahony
Harm Knoops
David A. J. Moran
Keywords:
improved performance
oxide semiconductor
Capacitor
Materials science
Metal
Optoelectronics
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