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Fabrication of GaN FinFETs using selective area growth: Study on process to form growth windows
Fabrication of GaN FinFETs using selective area growth: Study on process to form growth windows
2021
Takashi Ota
Mitsutaka Sasaki
K. Takayama
Takuya Hamada
Tokio Takahashi
Toshihide Ide
Mitsuaki Shimizu
Takuya Hoshii
Kuniyuki Kakushima
Hitoshi Wakabayashi
Kazuo Tsutsui
Keywords:
Materials science
Fabrication
Engineering physics
process
Correction
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