Исследование распределения дефектов в полупроводниковых пластинах интегральных схем при воздействии механических напряжений.

Dependences over of tensions are in-process brought in area of action of the concentrated force at the three-supporting bend of semiconductor lamina of Ge . At the chosen sizes and terms of deformation exceeding of tensions in a standard near-by a concentrator is substantial on a depth to 25мкм and from it along a surface in the distance < 1.2 мм. Got the method of structural analysis distribution of defects in a приповерхностном layer qualitatively comports with the results of the злектрических measuring of time of life of unbasic carriers of charge. The used probe method of measuring can be recommended for control the degree of imperfectness on the small fragments of the integrated circuits.