Tunable Low-Frequency Noise in Dual-Gate MoS 2 Transistors

We have systematically studied the effect of the back-gate voltage on the low-frequency noise properties of the MoS 2 transistors from 300 to 20 K in this work. The results show that the performance of the top-gate MoS 2 transistor can be effectively tuned by the back-gate voltage ${V}_{\text {bg}}$ . When ${V}_{\text {bg}}$ increases to 20 V, the maximum on-current increases up to 588 $\mu \text{A}$ / $\mu \text{m}$ for the 1- $\mu \text{m}$ channel length device, as well as five times reduction of the low-frequency noise and two times reduction in contact resistance. The Fermi-level modulation by adjusting ${V}_{\text {bg}}$ turns out to be an effective way of improving contact resistance and low-frequency noise for future high-quality MoS 2 metal-oxide–semiconductor field-effect transistors.