Sh. M. DUGUZHEW, A. V. MAKHIN, V. A. MOSHMKOV, A. I. SHELYKH

HccnenoBaHa npe~uinn~aq~~i B ner~poBambIx rmnueM H mmeM rennypuaax csu~qa H onoBa H HX TBepnbIX paCTBOpaX. COCTaB MKKpOBKJIWYeHK%, 06pa3y~~qnxcn B 6map~brx COeAHHeHHXX, COOTBeTCTBYeT XKMHYeCKHM 40pMyJIaM PbTelo. OCHOBHbIe CBO%CTBa HOBbIX COenliHeHK6 OIIpe]leJIeHhl. BX YneJIbHOe COIIpOTHBJIeHHe Ha 5 + 6 IIOpX,LWOB BeWYHHbI IIPeBbImaeT ynenbHoe COIIpOTHBJIeHHe Pb(Sn)Te. AHOMmbHbIe IiBJIeHUII IlepeHOCa, ~a6n~aae~b1e B BbICOKOJIeI’HpOBaHHbIX raJIJIKeM K KHnKeM 06pa3qax, MOrYT 6bITb 06bXCHeHbI Ha OCHOBe 6apbep~ofi MOAenH. Doping of lead telluride and its solid solutions by I11 group donor impurities (Ga, In, Al) is usually performed to obtain a low carrier concentration semiconductor material suitable for fabrication of photoresistive or photovoltaic sensors. Gallium and indium interactions with basic components of the materials probably resulting in second-phase precipitation are investigated insufficiently. The precipitates may effect the lead-tin chalcogenides electrophysical and optical properties and sensor operation. The present paper deals with the analysis of the second-phase precipitation conditions in PbTe and Pb, -,Sn,Te and of composition and properties of the precipitated material. The initial samples were obtained by ceramic process, by layer crystallisation in the rotating furnace (LAGKUEV, MOSHNIKOV), after Bndgman-Stockbarger and by the “vapourcrystal” growing. The samples were doped during the growing process and (or) by the isothermal diffusion from the impurity vapour source. Impurity and basic components distributions were analysed by electron-probe microanalysis (EPMA). Composition computations were performed according to the relative intensities ratio method.