Electronic stopping power of B 10 in Si in random and 〈100〉 channeling directions

We report measurements of $^{10}\mathrm{B}$ stopping powers in random and Si 〈100〉 directions. The measurements were carried out in the 500\char21{}9000 keV energy range for the channeling case and in the 300\char21{}800 keV for the random one. For the channeling measurements, the low energy data (500\char21{}800 keV) follow a ${\mathrm{v}}^{\mathrm{s}}$ regime with s=0.90\ifmmode\pm\else\textpm\fi{} 0.06 whereas, for the random data, dE/dx\ensuremath{\propto}${\mathrm{v}}^{\mathrm{s}}$ with s=1.1\ifmmode\pm\else\textpm\fi{}0.2. Both results are in good agreement with the prediction of current theories. On the other side, the experimental random $^{10}\mathrm{B}$ stopping power values (for energies up to 650 keV) are in fair agreement with the ones obtained from a scaling procedure by Ziegler, Biersack, and Littmark. However, for energies higher than 650 keV, slight but systematic differences are observed.