SiC Schottky junction type Alpha radioactive isotope battery and manufacturing method thereof

The invention discloses a SiC Schottky junction type Alpha radioactive isotope battery and a manufacturing method thereof, belonging to the fields of micro energy source, semiconductor and nuclear physics. The battery sequentially comprises an Alpha nuclide 6, an upper electrode 5, a Schottky metal layer 4, a SiO2 passivation layer 3, an n type SiC layer 2, an n type SiC layer 1, an ohmic contact layer 7 and a lower electrode 8; wherein the n type SiC layer 2 and the Schottky metal layer 4 form a Schottky junction, the SiO2 passivation layer 3 is arranged in periphery ring-shaped region of the Schottky metal layer 4 above the n type SiC layer 2, and the Alpha nuclide 6 is Alpha radioactive isotope. The battery disclosed by the invention utilizes SiC semiconductor material with strong radiation resistance on one hand, so that the efficiency of the Alpha radioactive isotope battery is higher and the service life thereof is longer; on the other hand Schottky structure is used, neither ion implantation is required to form good ohmic contact nor high temperature annealing is required to protect p type SiC surface to avoid sulciform surface structure, thus simplifying technology and correspondingly reducing manufacturing cost.