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Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C
Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C
1996
Kl Cheng
Cc Liu
Cm Fu
Hc Cheng
C Lee
Tr Yew
Keywords:
Nanotechnology
Metallurgy
Crystallite
Materials science
Beta (finance)
Correction
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