High energy implantation masking with polyimide

Abstract A negative working polyimide resist has been studied as high energy implantation masking material (Ciba-Geigy RD86-710). To determine the blocking characteristics in the MeV ion energy range, a new method based on polyimide beveling was developed. Nonlinear blocking phenomena due to polyimide shrinkage were observed. Experimental blocking characteristics for the polyimide photoresist is presented for phosphorus ion energies in the MeV range.