HiSIM: a MOSFET model for circuit simulation connecting circuit performance with technology

Circuit simulation models should be pragmatic, but should be accurate at the same time. HiSIM (Hiroshima-University STARC IGFET Model), aiming to fulfil both requirements, is based on an iterative surface-potential determination in 2D device simulators. However, the essence of each technology is extracted from measurements, thus simplifying modeling procedure and allowing large-scale circuit simulation with 0.1 /spl mu/m-MOSFET technologies.