90nm SOI-CMOS of 150GHz f/sub max/ and 0.8dB NF/sub min/ @6GHz for SOC

Recently, CMOS devices with 150 GHz f/sub max/ have been reported with a 0.18 /spl mu/m bulk CMOS technology. This paper describes a complete high frequency characterization of MOSFET devices obtained with a 0.13 /spl mu/m partially-depleted SOI technology, including for the first time microwave noise parameters on 90 nm SOI devices. A high f/sub max/ of 150 GHz and a low minimum noise figure of 0.8 dB with an associated gain of 16 dB @ 6 GHz have been obtained @1.2V under low power consumption (7mW).