Phase transition thin film material, preparation method thereof and phase transition memory unit

The invention provides a phase transition thin film material, a preparation method thereof and a phase transition memory unit. A general formula of the phase transition thin film material is Ni Ti Sb Te , wherein x is greater than 0 and lower than or equivalent to 40, y is greater than or equivalent to 15 and lower than or equivalent to 85, z is greater than or equivalent to 15 and lower than or equivalent to 85, and x+y+z is greater than or equivalent to 30 and lower than or equivalent to 100. The phase transition thin film material can realize reversible phase transition via external electric pulses, the resistance state is changed obviously before and after phase transmistion, a difference between the resistances is high, the state 0 or 1 can be read convenient and easily by an external circuit, and the phase transition thin film material can be an ideal phase transition storage material; and compared with common Ge2Sb2Te5, the phase transition thin film material has a higher crystallization temperature, a higher crystallization speed, a lower operation voltage and a more stable chemical preparation technology.