The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN
2014
In this work, the effects of growth pressure and growth rate on electrical and structural properties of Mg-doped GaN were investigated. It has been shown that enhanced growth rates induced by higher growth pressures may lead to decreased structural and electrical properties of p-type GaN layers. If the growth rate is kept unchanged, higher growth pressures will be beneficial for the quality of Mg-doped GaN due to the enhanced NH3 overpressure.
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