High-Performance Dual-Mode Solar-Blind Sensor of a Si-Doped β -Ga 2 O 3 Trench Schottky Photodiode

In this work, a Si-doped $\beta $ -Ga2O3 trench Schottky photodiode has been designed and fabricated. This photodiode works as a dual-mode solar-blind ultraviolet sensor with a photo-to-dark current ratio (PDCR) of $3.93\times 10 ^{5}$ , a responsivity (R) of 152.63 A/W, an external quantum efficiency (EQE) of 74653%, rise and decay time of 0.06 s and 0.06 s, under the irradiation of 254 nm ultraviolet light with intensity of $200~\mu \text{W}\cdot $ cm−2. Moreover, it has the potential to be a self-powered photodetector at zero bias. In general, this trench Schottky contact design has a good developing prospect in the field of ultraviolet solar-blind detection with high performances.