Influence of highly-charged 209Bi33+ irradiation on structure and optoelectric characteristics of GaN epilayer

Abstract The microstructure and optoelectric properties of GaN epilayer irradiated by highly-charged 209 Bi 33+ to different fluences are investigated by means of atomic force microscopy, X-ray photoelectron spectroscopy, Raman scattering spectroscopy and photoluminescence spectroscopy. After Bi 33+ irradiation, AFM observation shows the irradiated GaN surface is a swelling and swelling rate nonlinearly increases with increasing ions fluence. XPS analysis reveals the relative content of Ga-N bond reduces and Ga-O, Ga-Ga bonds have been produced as the fluence increases. Raman scattering spectra display the thickness of surface depletion layer increases, free carrier concentration and its mobility decrease generally with an increase in ions fluence. Furthermore, the length of Ga-N bond shortens and lattices experience compressive stress with increasing ions fluence are observed from Raman spectra. Room temperature PL spectra reflect the intensity of yellow luminescence (YL) emission increases and its peak has a blueshift after 1.061 × 10 12 Bi 33+ /cm 2 irradiation. Moreover, as the temperature rises, the thermal quenching of YL occurs and its peak position first exhibits a blueshift and then a redshift. Results may be served as a useful reference for HCI to be used in semiconductor fields.