Selective ITO (tin indium oxide) etching solution

The invention provides a selective ITO (tin indium oxide) etching solution. The etching solution is used for etching crystal and non-crystal ITO film layers, and is especially applicable to an ITO film of which the lower layer is a film substrate of organic polymers such as PET and the like and the upper layer is a monolayer or multilayer covering film consisting of copper or high-molecular compounds. The selective ITO etching solution is composed of the following components in percentage by weight: 15-25% of hydrochloric acid, 1-10% of acetic acid, 0.5-5% of a copper corrosion inhibitor, 5-500 ppm of a surfactant, and the balance of deionized water, wherein the copper corrosion inhibitor is at least one of a long-chain water-soluble amine compound and a triazole compound; the surfactant is a non-ionic surfactant. The etching solution is high in etching speed, effective, stable, free of residues and uniform in etching, and can be used for etching ITO completely, the edge of an ITO line is clear and has no lateral erosion, and the etching solution has no corrosion effect on copper layers.