Synthesis of microcrystalline silicon films by plasma enhanced chemical vapor deposition using multiple inductively-coupled-plasma modules with low-inductance antenna

Microcrystalline silicon thin films were prepared on glass substrates at low temperature (400/spl deg/C) by plasma enhanced chemical vapor deposition using an inductively-coupled plasma (ICP) source. The ICP source is equipped with four U-shaped internal low-inductance antenna (LIA) units, which are connected in parallel to an RF power generator at 13.56 MHz via a matching network.