Photoluminescence of CdZnSeZnSe quantum well structures fabricated by reactive ion etching

Abstract Wire and dot patterns of CdZnSe ZnSe quantum wells have been fabricated by a methane(CH 4 ) hydrogen(H 2 ) reactive ion etching technique. The structures exhibit photoluminescence emission down to the smallest widths of 40 and 60 nm, respectively. The wider wires and dots of about 200–1000 nm show even an increase of the normalized photoluminescence intensity for the emission line in CdZnSe ZnSe as compared to the unetched quantum well structure. For the smallest structures a decrease of the red shift is observed.