Progress in MOVPE growth of Ga2O3

Abstract The metalorganic vapor-phase epitaxy (MOVPE) of gallium oxide is reviewed. It is shown that different Ga 2 O 3 phases can be prepared by tuning the epitaxial growth parameters. The deposition temperature, partial pressure of the precursors, and crystallographic structure of the starting substrate/template are crucial in providing β, α, γ, and ɛ polymorph. At high deposition temperature (> 700°C), only the β-phase can be obtained, while at lower temperatures, the growth of the other metastable phases becomes possible. This chapter reviews the status of homoepitaxial and heteroepitaxial β-Ga 2 O 3 as well as the heteroepitaxial growth of the orthorhombic “pseudo-hexagonal” ɛ-phase. It is shown that although metastable, ɛ-Ga 2 O 3 may be grown with very good crystallographic properties on different hexagonal substrates.