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TCAD simulation of planar single-gate Si tunnel FET with average subthreshold swing less than 60 mV/dec for 0.3 V operation
TCAD simulation of planar single-gate Si tunnel FET with average subthreshold swing less than 60 mV/dec for 0.3 V operation
2017
K. Kukita
T. Uechi
Junji Shimokawa
Masakazu Goto
Yoshinori Yokota
Shigeru Kawanaka
Tetsufumi Tanamoto
Masato Koyama
Hiroyoshi Tanimoto
Shinichi Takagi
Keywords:
Swing
Optoelectronics
Subthreshold conduction
Planar
Materials science
subthreshold swing
Correction
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