Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes

InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ∼300 A. These artificial structures exhibit intense low‐temperature photoluminescence and show exciton shifts of 8–14 meV expected of low dimensional confinement. Low surface recombination velocity characteristic of InP and its alloys should allow luminescence studies of features as small as ∼30 A under moderate excitation intensities.