Effect of annealing on the interface formation in Mo/Be multilayer structures without/with barrier layer

In the present paper, the formation of an interface region in the multilayer periodic Mo/Be structure with/without B4C or Si barrier layer depending on annealing conditions was studied using X-ray photoelectron spectroscopy. Formation of different beryllides at the interfaces Be-on-Mo and Mo-on-Be was explained by the impact of the deposition-induced exchange caused by the ballistic collisions and surface free energy. The effect of barrier layer insertion on the thermal stability of Mo/Be structures was analyzed in detail. It was established that regardless of the material the introduction of barrier layer: i) limits the formation of beryllides with an increase in the annealing temperature at the Be-on-Mo interface; ii) prevents the formation of MoBe2, while forming a MoBe12 beryllide at the interface Mo-on-Be; iii) does not limit beryllium oxidation process at the Mo-on-Be interface.