A computationally efficient technique to extract diffused profiles and three dimensional collector resistances of high energy implanted bipolar devices
1997
A computationally efficient technique to extract the diffused profiles and collector resistances of bipolar transistors formed via high energy implantation in a BiCMOS process is developed. The methodology uses two dimensional process and device simulations to extract three dimensional collector resistances. The bias dependence of the collector resistance is also correctly predicted.
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