Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures

Abstract Effect of processing at up to 1400 K under Ar hydrostatic pressure (HP) equal to 1.1 GPa for oxygen-containing Czochralski grown silicon (Cz-Si) irradiated with neutrons (energy E = 5 MeV , dose D = 1 × 10 17 cm - 2 ) or γ -rays ( E = 1.2 MeV , D = 1000 Mrad ) on oxygen clustering and precipitation has been investigated by electrical, X-ray, infrared absorption, and photoluminescence methods. Depending on irradiation conditions, processing of irradiated Cz-Si, especially under HP, results in creation of oxygen-containing defects. Such processing of irradiated Cz-Si is helpful for revealing its irradiation-related history.