TSI Process Using Vapor-Applied Crosslinking Silylating Agents for Realizing sub-Quarter Micron Resolution.

The use of TSI processes pushes the limits of both DUV-lithography and e-beam direct writing. However, the volume expansion combined with the drop in glass transition temperature during silylation with monofunctional agents prevents a high resolution. The application of properly mixed mono-and bifunctional agents causes a crosslinking of the silylated resist and eliminates the flow effect. We selected bis (dimethylamino)methylsilane B(DMA)MS and dimethylsilydiethylamine DMSDEA as components, investigated the mixed agent and developed a TSI process. The optimized process enables the realization of a 0.15μm pattern in 0.7μm thick resist.