RC-IGBT with SiC freewheeling diode

A semiconductor module (10) comprises a reverse-conducting transistor (12a, 12b), which is an RC-IGBT or a BIGT having a gate (26a, 26b), a collector (16a, 16b) and an emitter (18a, 18b), a reverse-conducting diode (24a, 24b) between the collector and the emitter ready stellend; at least one freewheeling diode (28a, 28b), the anti-parallel to the transistor (12a, 12b) is connected, with a forward voltage drop across the reverse conducting diode during a static state; and a controller (32) for connecting the gates (26a, 26b) with an electrical potential to turn off the transistor (12a, 12b) on and off. The controller (32) is adapted for applying a pulse (46) with a positive electrical potential to the gate (26a, 26b) of the transistor (12a, 12b) before the reverse conducting diode (24a, 24b) enters a blocking state, so that in a dynamic state in which the reverse conducting diode (24a, 24b) enters into the blocking state, a forward voltage drop of the reverse conducting diode is higher than that of the at least one freewheeling diode (28a, 28b).