language-icon Old Web
English
Sign In
Acemap > Paper > Studied Near-infrared Photoluminescecen in Si-Implanted SiO2 Films after 1150C Rapidly Thermally Annealing at Heating Rate of 100 C/s

Studied Near-infrared Photoluminescecen in Si-Implanted SiO2 Films after 1150C Rapidly Thermally Annealing at Heating Rate of 100 C/s

2011 
Keywords:
    • Correction
    • Cite
    • Save
    • Machine Reading By IdeaReader
    0
    References
    0
    Citations
    NaN
    KQI
    []
    logo
    • CCF Conference Analysis
    • Map Galaxy
    • What's New
    © Copyright 2015-2020 Acemap, Inc. Shanghai Jiao Tong University.