The effect of Ti and O ion implantation on the resistive switching in Pt/TiO2−x/Pt devices

The effects of Ti and O implantation on TiO2−x resistive switches are systemically investigated. The forming voltage drops monotonically with Ti implantation dose and forming vanishes completely at 1016 ions/cm2, whereas oxygen implantation causes a decrease and then increase in forming voltage. The ON/OFF current ratio becomes worse with high Ti implantation due to increased leakage currents through the TiO2 film. Furthermore, the forming voltage minimum induced by oxygen implantation can be shifted by thermal annealing, suggesting a careful balance between oxidation, reduction, and ion implantation damage.