Switching characteristics and static parameter extraction in PD SOI MOSFET's

In switching operation the drain current delivered by partially depleted (PD) SOI MOSFETs in the floating body configuration differs from the DC values. We report the measured transients of the drain current within and below the kink region, discussing their dependence on the device bias. We assess their impact on the extraction of the static parameters, showing hysteresis in the low V/sub DS/ region of the DC characteristics.