Old Web
English
Sign In
Acemap
>
Paper
>
New High e Gate Dielectrics Gd_2O3 and Y_2O3 for Si
New High e Gate Dielectrics Gd_2O3 and Y_2O3 for Si
2000
J. Kwo
M. Hong
Ahmet Refik Kortan
Kate Queeney
Yves J. Chabal
T. S. Lay
J. P. Mannaerts
T. Boone
J. J. Krajewski
A. Michael Sergent
J. M. Rosamilia
Keywords:
Leakage (electronics)
Dielectric
Epitaxy
Single crystal
Single domain
Electronic engineering
Materials science
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]