Fundamental-transverse-mode high-power AlGaInP laser diode with windows grown on facets

The window-grown-on-facet (WGF) structure was first implemented to high power fundamental-transverse-mode AlGaInP lasers so as to reduce facet degradation. A kink-free CW maximum output power of 295 mW, about twice as much as for an identical non-WGF laser, was achieved at the wavelength of 680 mm; and fundamental-transverse-mode operation up to 150 mW was confirmed. Front and rear window layers are undoped (Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P grown by MOCVD, while the internal laser was grown by solid-source MBE. The effect of the regrowth of the window layer was evaluated by time-resolved photoluminescence, and a threefold improvement in photoluminescence decay time was observed. >