Growth of Ultra-uniform B-doped Si/SiGe Multiple Quantum Wells by RTCVD for Mid-IR Applications

The authors report the growth of B-doped Si/SiGe multiple quantum wells (MQW) structures by rapid thermal chemical vapor deposition (RTCVD) for intersubband transitions with extreme uniformity and interface abruptness. An excellent well to well uniformity is reported as measured through high resolution SIMS