A Novel Double Source TFET for Low Power Application

Evolution of TFET has revolutionized semiconductor physics and these has been a tremendous and steady in development of VLSI technology incorporating TFET. An innovative TFET called Double Symmetrical Source Tunnel FET (DSS-TFET) is put forward in this paper, which foster higher ON Current (I ON ) with smaller driving voltage as compared to conventional TFETs. The tunnelling area is considerably reduced which in turn increases the I ON , for a smaller turn on voltage. The influence of variation parameters like channel length, oxide thickness, gate work function and Source-length on the efficiency of the device have been studied and compared with conventional TFET devices. Silvaco-Atlas 2-D simulation has been used in the work to achieve excellent SS of 23mV/decade and high I ON /I OFF of 1013 at $\mathrm{V}_{\text{DS}}=0.1\mathrm{V}$ . 1-D Quantum confinement effect has been studied for the proposed DSS-TFET using the Schrodinger-Poisson model in the simulations. The DSS-TFET has excellent performance characteristics and is viable for low power applications.