Characterization of the GaN‐rich side of GaNP grown by metal‐organic chemical vapor deposition

We have investigated the growth of the GaN-rich side of GaNP films by metalorganic chemical vapor deposition (MOCVD). The GaNP samples were mainly analysed by using X-ray diffraction (XRD) and Auger electron spectroscopy (AES). From the XRD measurement, we have found that the c-axial lattice constant and the a-axial lattice constant of our GaNP were smaller than those of GaN. Moreover, we have confirmed that these lattice constants decreased with increasing PH 3 flow rate. According to the AES analysis, the nitrogen concentration in GaNP hardly changed along with increasing the PH 3 flow rate, but the gallium concentration tended to decrease. This fact implies that a phosphorus atom would be replaced with not a nitrogen atom but a gallium atom on III-group site.