Growth and characterization of AuN films through the pulsed arc technique

Abstract AuN films were produced through the PAPVD (Plasma Assisted Physics Vapor Deposition) method, using the pulsed arc technique in a mono-vaporizer noncommercial system, which consists of a chamber with two faced electrodes, and a power controlled system. In order to obtain the films, an Au Target with 99% purity and stainless steel 304 were used as target and substrate respectively. Nitrogen was injected in gaseous phase at 2.3 mbar pressure, and a discharge of 160 V was performed, supplied by the power controlled source. Au4f and N1s narrow spectra were analyzed using XPS (X-ray Photoelectron Spectroscopy).