Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked films

Abstract A reversible electron trapping phenomenon in thin oxide/nitride/oxide (ONO) films with respect to stress current and field near the tunneling region is demonstrated for the first time. Trapped electrons can be detrapped by applying a low field or low current stressing under negative gate bias. A very effective electron detrapping process in the thin nitride layer is proposed to explain these unusual trapping behaviors of thin ONO films. The effects of processing chemistry of silicon nitride deposition on the electrical characteristics of thin ONO capacitors and their stability are also discussed.