Resistivity simulation of CZT materials

Abstract Defects and the relations with the levels introduced in the gap are among the toughest remaining problems in II–VI semiconductors. Up to now, more than 30 levels have been detected without any clear identification and assignation for most of them. PICTS, TEES and TSC are well suited for such investigation, but not complete. A very useful complement is provided by numerical simulation of some properties and the comparison between calculation and experimental results. We have used a simple existing model using the neutrality equation and the Fermi–Dirac distributions. This model was improved to introduce more than three levels which is largely our case (30 levels, 5–6 bands). Carrier concentration and resistivity are then deduced. PICTS results are used as model input. Results and compensation processes are discussed.