High Performance ZnO Nanowire FET with ITO Contacts

Nanowire FETs based on a ZnO channel, a SiO 2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.