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10 kV, 123 m {Ω}-cm2 4H-SiC Power DMOSFETs
10 kV, 123 m {Ω}-cm2 4H-SiC Power DMOSFETs
2004
Sei-Hyung Ryu
Sumi Krishnaswami
Michael J. O'Loughlin
James Richmond
Anant K. Agarwal
John W. Palmour
Allen R. Hefner
Keywords:
Electronic engineering
Chemistry
Power semiconductor device
Silicon carbide
High voltage
MOSFET
Semiconductor
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