In situ x‐ray photoelectron spectroscopy and reflection high‐energy electron diffraction study of diethylgalliumchloride adsorption on Si (100) and Si (111) surfaces

Diethylgalliumchloride (DEGaCl) adsorption on Si(100) 2×1 and Si(111) 7×7 surfaces is studied by reflection high‐energy electron diffraction and x‐ray photoelectron spectroscopy. DEGaCl adsorbs molecularly on the (100) surface at room temperature, while the Ga—Cl bond dissociates on Si(111). The Si(111) 7×7 structure is greatly disturbed after DEGaCl exposure, indicating a strong interaction between the surface and the adsorbate. The spatial distribution of dangling bonds is thought to be responsible for the differences in the reactivity between the two surfaces. The Ga—ethyl bond dissociates on both Si(100) and (111) surfaces after annealing at 210 °C, and at the same time Cl desorbs from the surfaces. The Cl desorption process is also discussed.