Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses

Summary form only given. Data are presented that demonstrate electron production by avalanche ionization as the dominant mechanism for laser breakdown, and subsequent surface damage in silicon, for laser pulse durations in the range of 80 fs to 9 ns. Experiments are performed at 786 nm and 1.06 /spl mu/m exhibiting the correct wavelength dependence for an avalanche process.