High-performance sub-10 nm monolayer black arsenic phosphorus tunneling transistors

Abstract Tunneling field-effect transistors (TFETs) based on two-dimensional (2D) materials are expected to break the physical limits of Moore's Law and extend them to the sub-10 nm scope. We systematically study the performance limits of sub-10 nm (6.4-9.6 nm) monolayer (ML) AsP TFETs by means of ab initio quantum transport calculation. With optimized doping, ML AsP TFETs show excellent performance in the armchair transport direction, which is satisfied the requirements of the International Technology Roadmap for Semiconductors (ITRS) and the International Roadmap for Devices and Systems (IRDS 2028 projection) for high-performance (HP) applications in the next ten years in terms of on-state current, delay time, and power consumption per wide power. More encouragingly, ML AsP TFET can still meet the goal of ITRS for low-power (LP) applications even if the gate length is scaled down to 8.7 nm. The on-state current of our proposed AsP TFET is superior to that of TFETs based on InAs, arsenene, antimonene, bismuthene, etc at approximate nodes, making it highly competitive in two-dimensional material semiconductor devices.