Kinetic Modelling of Plasma Activated BN-Film Deposition in the System B-N-H-F

The paper presents for the Ar/B/N/H/X-system (X = F, Br) thermodynamic calculations of the mole fraction at equilibrium conditions and kinetic modelling of the BN-growth at plasma-activated chemical deposition. Modelling was performed with the software CHEMKIN® 4.1. The data of different databases (NASA, JANAF, NIST) are used in the thermodynamic equilibrium modelling and the results are compared among each other and also with results from the literature. Kinetic modelling is focused on the system Ar/B/N/F/H to find out the influence of nitrogen, fluorine and the plasma power on the BN-growth rate. The data received by modelling are compared qualitatively with experimental results in c-BN-deposition and -etching.