Atomic Layer Deposition of Bi1 − x − y Ti x Si y O z Thin Films Using H2O Oxidant and Their Characteristics Depending on Si Content

Bi 1-x-y Ti x Si y O z (BTSO) films were deposited on sputtered Ru/SiO 2 /Si substrates by the atomic layer deposition method using tris(l-methoxy-2-methyl-2-propoxy)bismuth, titanium tetraisopropoxide, and tetraethylorthosilicate as Bi, Ti, and Si precursors, respectively, arid H 2 O as an oxidant at temperatures ranging from 225 to 300°C. The film thickness ranged from 13 to 18 nm. The Si contents in the films ranged from 10 to 25 atom % and the dielectric constants ranged from 29 to 43 depending on the Si content. All of the BTSO films had very low carbon contents (<0.5 atom %), X-ray diffraction showed that the as-grown films were amorphous and, after annealing at 600°C for 30 min the films were crystallized to the pyrochlore structure.