Growth process and mechanism of SiC layer deposited by CVD method at normal atmosphere

Abstract The growth process and its mechanism have a significant effect on the microstructure and properties of SiC layers. In this study, we investigated the growth process and microstructure of SiC coating layers fabricated at normal atmospheric pressure under various temperatures based on the structure of the SiC layers and powders. The structure of these samples obtained from tail gas is related to changes in the growth process. SiC nanoparticles and nanowires from tail gas indicate that SiC can nucleate and grow not only on substrates but also in a gaseous environment. Our results also indicate that the fusion of liquid droplets and the growth of SiC crystals are the main processes governing the formation of the SiC layer at low temperature and high temperature, respectively. Hence, different growth processes lead to variations in the SiC layer properties.