Implant Anneal Using a Single-Wafer Furnace and a Lamp-Based Rapid Thermal Annealing System

Rapid thermal annealing (RTA) of various implant species ( 11 B + . 49 BF + 2 , 31 P + , and 75 As + ) in 200 mm diam Si wafers was done using a single-wafer furnace (SWF) system and a lamp-based system under a N 2 ambient at atmospheric pressure. Sheet resistance and its uniformity were measured after annealing under various conditions. Equivalent or superior sheet resistance and uniformity were achieved in the SWF system compared to lamp-based RTA systems. The effect of annealing method, temperature, and time on dopant redistribution were investigated using secondary ion mass spectroscopy.