Silicon Carbide, A Semiconductor for Power Devices

Silicon carbide has a tremendous potential for power electronics due to its high electric breakdown field, wide bandgap and high thermal conductivity. High quality epitaxy can be obtained on SiC substrates by a hot-wall CVD while a much higher growth rate was obtained by high-temperature CVD. A 4.5 kV pn-diode and a 3 kV of Schottky diode have been demonstrated.