Analytical Modeling of Sheet Carrier Density and on-Resistance in Polarization Super-Junction HFETs

In this article, we report on the analysis of the ON-state behavior of polarization super-junction (PSJ) heterojunction field-effect transistors (HFETs). Theoretical models for calculating the sheet densities of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) are proposed and calibrated with numerical simulations and experimental results. To calculate the area-specific ON-state resistance ( ${R}_{({\text{ON}, \text{sp}})}$ ) of PSJ HFETs, ohmic gate (OG) structures are considered herein. The calculated results are well fit with the simulated and measured results at different PSJ length ( ${L}_{\text {PSJ}}$ ) conditions at room temperature.