A Modified Method for Sensitive Parameters of GaN HEMTs Large Signal Model

The role of device modeling in RF circuit has received increased attention across a number of disciplines in recent years. Consequently, there are higher requirements on the accuracy of the model. Therefore, this paper intends to discuss the way to build the Angelov Model of the Gallium Nitride (GaN) based high electron mobility transistors (HEMTs). For the classic Angelov Model, there are many parameters to describe the trace about Ids curves. With these parameters, the accuracy of the model can be ensured. However, for the Ids curve, one of the main obstacles is that the classic Angelov Model can hardly describe its accuracy, especially when the gate voltage is lower than the knee voltage because of some sensitive parameters is regarded as constant. In order to solve the obstacle, a modified Angelov Model changes the value of two parameters which are sensitive for the output Ids curve is proposed in this paper. Fitting the formula according to the value of the parameter, finally, the accuracy of the curve fitting can be improved, and the error can be reduced to 1 %.